Low growth temperature GaAs microbolometers

Jason M. Lewis

doi:10.1117/12.2301529

1 December 1990 Low growth temperature GaAs microbolometers

Jason M. Lewis

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15143B (1990) https://doi.org/10.1117/12.2301529
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

Microbolometers with a large negative temperature coefficient have been fabricated using an epitaxial GaAs layer grown at low temperature (LTGaAs). The detector elements used have potential in composite bolometer structures where high dR/dT materials can be used without having to be impedance matched to the antenna structure. The LTGaAs material exhibited a thermally activated conduction mechanism (Ea ~ 0.3 eV) with temperature coefficients of -0.05 K^-1 and -0.02 K^-1 at 110 K and 290 K respectively. Thermal impedance calculations suggest that the negative temperature coefficient produces filamentary electrical paths. Intrinsic dc detector responsivities as high as 10⁸ V/W have been extracted from I-V measurements.

Citation Download Citation

Jason M. Lewis "Low growth temperature GaAs microbolometers", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15143B (1 December 1990); https://doi.org/10.1117/12.2301529

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