Residual film detection using UV reflectance difference measurements

Anne M. Kaiser

doi:10.1117/12.59813

1 June 1992 Residual film detection using UV reflectance difference measurements

Anne M. Kaiser

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59813
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Detection and removal of residual films is important throughout the semiconductor integrated circuit fabrication process. However, at two steps in the production process, silicide formation and selective Tungsten growth, removal of residual films is critical. Failure to remove residuals prior to processing at these two steps results, at best, in devices with degraded performance and, at worst, in non-functional devices. A method for detecting residual films using ultraviolet reflectance measurements is described and experimental results are presented.

Citation Download Citation

Anne M. Kaiser "Residual film detection using UV reflectance difference measurements", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59813

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