Nonalloyed contacts to p-type GaAs

Peter A. Barnes; Joongseo Park; John B. Crofton

doi:10.1117/12.146540

9 June 1993 Nonalloyed contacts to p-type GaAs

Peter A. Barnes, Joongseo Park, John B. Crofton

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146540
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

The formation of low resistance ohmic contacts to semiconductor devices in which no melting ('alloying') of the contacting metals occurs is highly desirable. To form these contacts a very thin depletion layer must be created at the metal-semiconductor, MS, interface with tunneling occurring at the Fermi level. We describe two contacting schemes to p-type GaAs that avoid the alloying step and permit the use of robust refractory metals for the contacts. The p-contact will be important in proposed photo conductive switches using a P-i-N structure instead of the more common N-i-N structure. The work reported describes our studies of (a) a simple diffusion apparatus to create degenerate hole concentrations near the semiconductor interface and (b) a very stable highly doped epitaxial layer grown using Liquid Phase Epitaxy (LPE).

Citation Download Citation

Peter A. Barnes, Joongseo Park, and John B. Crofton "Nonalloyed contacts to p-type GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146540

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