AlGaAs for nonlinear integrated optics at 1.55 um

Alain Villeneuve; George I. Stegeman; J. Stewart Aitchison; Kadhair Al-Hemyari; Charles N. Ironside; C. C. Yang; Chih Hong Lin; Hao-Hsiung Lin

doi:10.1117/12.165609

5 January 1994 AlGaAs for nonlinear integrated optics at 1.55 um

Alain Villeneuve, George I. Stegeman, J. Stewart Aitchison, Kadhair Al-Hemyari, Charles N. Ironside, C. C. Yang, Chih Hong Lin, Hao-Hsiung Lin

Author Affiliations +

Proceedings Volume 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications; (1994) https://doi.org/10.1117/12.165609
Event: Optics Quebec, 1993, Quebec City, Canada

Abstract

Semiconductors and in particular AlGaAs operated at photon energies below half the band gap have proven over the last few years to be optimum materials for studying nonlinear guided phenomena, including ultrafast all-optical switching. Here we report experimental results on a range of characterization measurements and implementations of all-optical switching devices.

Citation Download Citation

Alain Villeneuve, George I. Stegeman, J. Stewart Aitchison, Kadhair Al-Hemyari, Charles N. Ironside, C. C. Yang, Chih Hong Lin, and Hao-Hsiung Lin "AlGaAs for nonlinear integrated optics at 1.55 um", Proc. SPIE 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications, (5 January 1994); https://doi.org/10.1117/12.165609

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