Paper
1 February 1994 Synthesis of silicon-based dielectric films by excimer laser ablation
Eric Fogarassy, Claude Fuchs, Adelilah Slaoui, Salome de Unamuno, Jean-Paul Stoquert, Vladimir I. Marine, Bernard Lang
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Abstract
Silicon oxide, oxynitride and nitride films are deposited at low temperature (<EQ 450 degree(s)C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The process conditions are optimized in order to deposit good quality silicon oxide and silicon nitride thin films.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Fogarassy, Claude Fuchs, Adelilah Slaoui, Salome de Unamuno, Jean-Paul Stoquert, Vladimir I. Marine, and Bernard Lang "Synthesis of silicon-based dielectric films by excimer laser ablation", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167554
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Laser ablation

Oxygen

Semiconductor lasers

Silicon films

Oxides

Absorption

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