Paper
16 May 1994 Novel spacer technique by silylation: experiment and simulation
Ulrich A. Jagdhold, Lothar Bauch, A. Wolff, Joachim J. Bauer
Author Affiliations +
Abstract
A new advanced process scheme is presented using a self aligned sidewall oxide film formation. The process technique was evaluated with simulation methods. During the experiments a new effect, the selective silylation, was found.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Lothar Bauch, A. Wolff, and Joachim J. Bauer "Novel spacer technique by silylation: experiment and simulation", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175361
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Etching

Oxides

Photoresist processing

Scanning electron microscopy

Diffusion

Isotropic etching

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