Development of transparent conductive ZnO by Rf magnetron sputtering

Francesca Demichelis; C. F. Pirri; E. Tresso

doi:10.1117/12.192077

4 November 1994 Development of transparent conductive ZnO by Rf magnetron sputtering

Francesca Demichelis, C. F. Pirri, E. Tresso

Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192077
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France

Abstract

In the present work it is reported a study on ZnO:Al deposited by RF magnetron sputtering of Zn and Al cathodes, or ZnO and Al cathodes in Ar+O₂ and Ar atmosphere respectively. In order to obtain high band-gap films transparent in the 300 - 1000 nm wavelength region and highly electrical conductive films, an optimization of the deposition parameters has been performed by the Robust Design Method. ZnO:Al films, with an average transmittance above 85% for about 5000 angstroms thickness and a resistivity of 2 10^-3 (Omega) cm have been grown.

Citation Download Citation

Francesca Demichelis, C. F. Pirri, and E. Tresso "Development of transparent conductive ZnO by Rf magnetron sputtering", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192077

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