Optical characterization of Si on insulator structure

Tomuo Yamaguchi; A. Mangyou; Makoto Aoyama; Y. Kanda

doi:10.1117/12.190763

26 October 1994 Optical characterization of Si on insulator structure

Tomuo Yamaguchi, A. Mangyou, Makoto Aoyama, Y. Kanda

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190763
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Three kinds of SOI (Si on Insulator) samples, i.e., SIMOX (Separation by Implanted Oxygen), ZMR (Zone Melt Recrystallization) and DB (Direct Bond), have been optically characterized by measuring normal incidence reflectance R spectra from 200 to 2000 nm and spectroellipsometric parameters (Psi) and (Delta) from 230 to 700 nm. The sample structure analyzed is as follows; Air/SiO₂(d₀)/rough interface ((sigma) )/Si(d₁)/SiO₂(d₂)/Si. Using established values for n and k of Si and SiO₂, we performed fitting to get values of (sigma) , d₁ and d₂ with nm accuracy. It was found that (sigma) equals 0 for SIMOX while (sigma) equals 7.7 nm for ZMR. For DB initially (sigma) equals 0, but thinning treatment of top Si layer by intentional thermal oxidization followed by HF etching emerges surface roughness as large as (sigma) equals 3.3 nm. It was also found that the thickness of top SiO₂ layer d₀ is about 3.3 nm and affects mainly (Psi) and (Delta) while (sigma) affects mainly R spectra. It is shown that a method to calculate the influence of interface roughness using effective medium approximation (EMA), which is widely used in commercial ellipsometers, is not appropriate to explain experimental results.

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Tomuo Yamaguchi, A. Mangyou, Makoto Aoyama, and Y. Kanda "Optical characterization of Si on insulator structure", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190763

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