Paper
22 February 1995 Adiabatic 3 dB-coupler on InGaAsP/InP using double masking
Jos J.G.M. van der Tol, Jorgen W. Pedersen, Ed G. Metaal, Y. Siang Oei, Hedser H. van Brug, Piet M. A. Demeester
Author Affiliations +
Proceedings Volume 2449, Fiber Optic Network Components; (1995) https://doi.org/10.1117/12.201988
Event: Advanced Networks and Services, 1995, Amsterdam, Netherlands
Abstract
An adiabatic 3 dB-coupler is realized on InGaAsP/InP for the first time. The device consists of an asymmetric and a symmetric Y-junction, connected by a bimodal waveguide. The operating principle of such a device is not based on interference effects, but on evolution (or adiabatic propagation) of modes in the Y-junctions. This allows a tolerant fabrication and a low sensitivity to operating conditions, wavelength, and polarization. In general mode evolution components however tend to be rather long. The length of our coupler is reduced with respect to previous adiabatic couplers by using an optimized design for the asymmetric Y-junction, which contains two sections with different branching angles. This design permits a total length of the coupler of 3 mm. The device is realized using a double masking technique in order to obtain high quality splitting points in the Y-junctions. Experimentally a coupling ratio of 3 +/- 0.3 dB was found, independent of the length of the bimodal waveguide and the polarization, at a wavelength of 1.5 micrometers . The excess loss is below 1 dB.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jos J.G.M. van der Tol, Jorgen W. Pedersen, Ed G. Metaal, Y. Siang Oei, Hedser H. van Brug, and Piet M. A. Demeester "Adiabatic 3 dB-coupler on InGaAsP/InP using double masking", Proc. SPIE 2449, Fiber Optic Network Components, (22 February 1995); https://doi.org/10.1117/12.201988
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Waveguides

Photomasks

Polarization

Beam propagation method

Lithography

Photoresist materials

Heterojunctions

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