Paper
13 September 1995 Active interference filters using silicon-compatible materials
D. P. Poenar, Patrick J. French, Reinoud F. Wolffenbuttel
Author Affiliations +
Abstract
The basic aim of this work is to obtain optical detectors with a spectral response programmable by design using the combined response of polysilicon and monocrystalline silicon photodiodes. Such an approach is needed in order to obtain a color sensor with improved flexibility and control of its characteristic parameters. In order to achieve this aim, the potential of different multilayer thin film light detectors has been evaluated. The results show that polysilicon diodes can be realized and used as light detectors and a simple test structure has been fabricated in order to demonstrate the possiblity of implementing thin film color detecting structures.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. P. Poenar, Patrick J. French, and Reinoud F. Wolffenbuttel "Active interference filters using silicon-compatible materials", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); https://doi.org/10.1117/12.220939
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KEYWORDS
Sensors

Interference filters

Silicon

Diodes

Multilayers

Oxides

Refractive index

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