Paper
3 October 1996 Spin-splitting of the energy band for strained superlattices with three materials
Yuan Tian, Yuheng Peng, Wei-You Chen, Shiyong Liu, BaoLin Zhang, Yixin Jin
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Abstract
In this paper, the valence band spin-splitting for the strained superlattices composed of AlyGa1-yAs, AlxGa1-xAs and GaAs was studied. By varying the material compositions or the layer thickness, we observed that the subbands corresponding to the spin-up and spin-down split when the superlattices unit-cell is asymmetrical about the cell center. The spin-splitting is defined as the splitting for both spin-up and spin-down in a spin degenerate subband. Moreover, the splitting mainly occurs at the region where the heavy hole and light hole interact on each other strongly.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Tian, Yuheng Peng, Wei-You Chen, Shiyong Liu, BaoLin Zhang, and Yixin Jin "Spin-splitting of the energy band for strained superlattices with three materials", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252972
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KEYWORDS
Superlattices

Gallium arsenide

Semiconductors

Quantum wells

Magnetic semiconductors

Aluminum

Gallium

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