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7 July 1997 Performance of small-field 193-nm exposure system
Dohoon Kim, Kag Hyeon Lee, Jong-Soo Kim, Sang-Soo Choi, Hye-Keun Oh, Hai Bin Chung, Hyung Joun Yoo
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Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.276048
Event: Microlithography '97, 1997, Santa Clara, CA, United States
Abstract
A small field ArF excimer laser based exposure tool has been designed and fabricated for the 193 nm lithography process research and exposure tool development. The projection optics based upon Schwartzchild concept has a specification of 3 mm field diameter, X5 reduction ratio, and 0.5 NA. The exposure tool uses an unnarrowed ArF excimer laser as a light source, and uses a fly's eye homogenizer to produce a reticle illumination uniformity of < +/- 5% RMS/pulse. The results of preliminary exposure with PMMA resist coincided with simulation and expectation, and advanced imaging tests carrying out for various resists. In this paper, we report the detailed system parameters and characterization data of the small field ArF excimer laser exposure tool and some of advances in 193 nm lithography that have been achieved with the system.
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Citation Download Citation
Dohoon Kim, Kag Hyeon Lee, Jong-Soo Kim, Sang-Soo Choi, Hye-Keun Oh, Hai Bin Chung, and Hyung Joun Yoo "Performance of small-field 193-nm exposure system", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276048
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KEYWORDS
Excimer lasers
Lithography
Eye
Light sources
Polymethylmethacrylate
Projection systems
Reticles
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