Paper
26 May 1998 Pulsed laser deposition of polycrystalline zirconia thin films
Francoise Hanus, Lucien Diego Laude
Author Affiliations +
Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308617
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Pulsed laser deposition is used in this work to produce zirconia thin films. Targets are sintered zirconia ceramic pellets which are fully or partially stabilized with either 3%mol. Y2O3, 20%mol. MgO or 9%mol. CaO. Depending on the stabilizing oxide, their structure is either tetragonal or cubic in the presence of an eventual monoclinic secondary phase. The targets are laser irradiated with a KrF excimer laser (248 nm) at an energy density of 4J/cm2 per pulse in an oxygen residual pressure of 0.3 mbar. The ejected matter is collected on fused quartz substrates. These are heated during deposition at temperatures Ts ranging between 400 and 600 degree(s)C. Both targets and films are analyzed via normal incidence and low angle X-ray diffraction and the optical band gap of the films is evaluated via IR-VIS-UV optical transmission. Preparation conditions are then defined which allow to produce films possessing remarkably the same crystalline structure as the corresponding target.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francoise Hanus and Lucien Diego Laude "Pulsed laser deposition of polycrystalline zirconia thin films", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308617
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KEYWORDS
Zirconium dioxide

Thin films

Crystals

Oxygen

X-ray diffraction

Pulsed laser deposition

Excimer lasers

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