Light emission in silicon nanostructures

David J. Lockwood

doi:10.1117/12.328603

4 December 1998 Light emission in silicon nanostructures

David J. Lockwood

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328603
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Interest in obtaining useful light emission from silicon- based materials has never been greater. This is because there is a strong demand for optoelectronic devices based on silicon and also because there has recently been significant progress in materials engineering methods. Here we review the latest developments in this work, which is aimed at overcoming the indirect band gap limitations in light emission from silicon. One promising new approach, based on thin-layer Si/SiO₂ superlattices, is reviewed in detail. The incorporation of these different materials into devices is described and future device prospects are assessed.

Citation Download Citation

David J. Lockwood "Light emission in silicon nanostructures", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328603

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