Investigation of rod-like defects in MOS 12

Ray Goodner; Ping Wang; Fourmun Lee; Ron Ceton; John Rios; Steve Howard

doi:10.1117/12.324417

27 August 1998 Investigation of rod-like defects in MOS 12

Ray Goodner, Ping Wang, Fourmun Lee, Ron Ceton, John Rios, Steve Howard

Proceedings Volume 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II; (1998) https://doi.org/10.1117/12.324417
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

A unique defect type was detected by routine KLA inspection. The shape of the defect was rod like, about 1/2 micron in width with length varying from 1 to several microns. The defects were located in the notch area with defect counts often exceeding one thousand per wafer. Through the analysis of bitmap/visual defect overlay, it was shown these rod-like defects are yield killers. This was confirmed by cumulative probe yield maps which showed lower yields for dice located near the notch. In this paper, the mechanism for the rod- like defect formation will be described in detail. The techniques used to investigate the mechanism, defect characteristics, and yield impact will be discussed. The implementation of the solution to eliminate the rod defects will also be discussed.

Citation Download Citation

Ray Goodner, Ping Wang, Fourmun Lee, Ron Ceton, John Rios, and Steve Howard "Investigation of rod-like defects in MOS 12", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324417

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