Paper
19 August 1998 Ripple formation on GaAs surfaces by ultrafast (fs) laser pulses
Laszlo Nanai, Robert Vajtai, L. Fabian, Sandor Szatmari, Seppo Leppaevuori, Thomas F. George
Author Affiliations +
Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.320991
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary
Abstract
We have observed an appearance of a wavelike (ripple) structures on GaAs due to influence of ultrafast (fs) laser pulses. Optical and atomic force microscopy studies revealed the double wavelength characters of ripples inside and outside of the illuminated areas. Raman investigations showed the existence of zinc-blend to cubic transitions in crystalline symmetry at the peripherical part of the irradiated area.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laszlo Nanai, Robert Vajtai, L. Fabian, Sandor Szatmari, Seppo Leppaevuori, and Thomas F. George "Ripple formation on GaAs surfaces by ultrafast (fs) laser pulses", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.320991
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KEYWORDS
Gallium arsenide

Ultrafast phenomena

Atomic force microscopy

Crystals

Raman spectroscopy

Laser scattering

Physics

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