Characterization of glass on electronics in MEMS

Shefali Patel; Drew Delaney; DaXue Xu; Gene Murphy; Heidi L. Denton; Henry G. Hughes

doi:10.1117/12.360481

3 September 1999 Characterization of glass on electronics in MEMS

Shefali Patel, Drew Delaney, DaXue Xu, Gene Murphy, Heidi L. Denton, Henry G. Hughes

Proceedings Volume 3875, Materials and Device Characterization in Micromachining II; (1999) https://doi.org/10.1117/12.360481
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States

Abstract

Microelectromechanical systems (MEMS) have been around for many years. However, reliability issues, increasing costs, and die sizes are pushing the technology beyond its current capabilities. Integrating a micromachined sensor with its control circuitry on a single piece of silicon offers a cost and a performance advantage over the conventional two chip sensor. The enhancements offered by an integrated MEMS device are leading to many new challenges. The ability to encapsulate the MEMS device without affecting the integrated circuit is a key concern. One method of hermetically sealing the MEMS uses a frit glass which can cause potential damage to the integrated circuit because of the sealing parameters used. In standard CMOS processing, the integrated circuit is not subjected to high temperatures once the devices are built, whereas in wafer level packaging, high temperatures are involved. The high temperatures and the glass composition associated with the sensor capping process could be detrimental to these devices. A test vehicle was developed, therefore, to evaluate the compatibility of the CMOS and the sensor capping processes. The electrical results suggest that the glass and bonding process do not degrade the transistor performance.

Citation Download Citation

Shefali Patel, Drew Delaney, DaXue Xu, Gene Murphy, Heidi L. Denton, and Henry G. Hughes "Characterization of glass on electronics in MEMS", Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); https://doi.org/10.1117/12.360481

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