Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs

Seng Lee Ng; Oki Gunawan; Boon Siew Ooi; Yee Loy Lam; Yan Zhou; Yuen Chuen Chan

doi:10.1117/12.370305

12 November 1999 Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs

Seng Lee Ng, Oki Gunawan, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370305
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

We report the development of a new quantum well intermixing technique in GaAs/AlGaAs laser structure. This technique uses a grown-in AlAs sacrificing layer as intermixing source and with the same layer, but oxidized using a one-step rapid thermal process (RTP), as the intermixing mask. Selective intermixing can therefore be achieved across the wafer using a one-step RTP cycle. Differential bandgap shift of as large as 47 meV has been observed from the masked and oxidized regions.

Citation Download Citation

Seng Lee Ng, Oki Gunawan, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, and Yuen Chuen Chan "Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370305

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