Ion-source-assisted pulsed-laser deposition of carbon nitride thin films

Z. F. He; Yongfeng Lu; ZhiHong Mai; ZhongMin Ren

doi:10.1117/12.387585

7 June 2000 Ion-source-assisted pulsed-laser deposition of carbon nitride thin films

Z. F. He, Yongfeng Lu, ZhiHong Mai, ZhongMin Ren

Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387585
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States

Abstract

Ion source assisted pulsed laser deposition has been used to synthesize carbon nitride thin films. This synthesis method has both advantages of pulsed laser deposition (PLD) and ion implantation. The average ion beam current, the beam voltage, the laser pulse energy, and substrate temperature can be controlled systematically. Scanning tunneling microscopy (STM) has been used to study the surface properties. The (dI/dV)/(I/V) values have been calculated to study the local density of states (LDOS) on the film surface. Experiment results have been analyzed by Raman spectra to see the influence of the substrate temperature. Thin films CN_x with nitrogen content of 32% have been investigated by X-ray photoelectron spectroscopy (XPS). The results can reveal the formation of different bonds. Fourier transform infrared spectra (FTIR) was also used to study the bonding of films. The hardness of the synthesized thin film was analyzed by a nanoindentor. The result shows that the carbon nitride films have high hardness.

Citation Download Citation

Z. F. He, Yongfeng Lu, ZhiHong Mai, and ZhongMin Ren "Ion-source-assisted pulsed-laser deposition of carbon nitride thin films", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); https://doi.org/10.1117/12.387585

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