Modeling of gallium nitride optoelectronic devices

Curt A. Flory; Ghulam Hasnain

doi:10.1117/12.391401

14 July 2000 Modeling of gallium nitride optoelectronic devices

Curt A. Flory, Ghulam Hasnain

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391401
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The nature of our work in the area of research and development of nitride-based LEDs and laser diodes requires a fast modular tool for numerical simulation and analysis. It is required that the modeling tool reflects the primary physical processes of current injection, quantum well bound state dynamics, quantum well capture, radiative and non-radiative transitions. The model must also have the flexibility to incorporate secondary physical effects, such as induced piezoelectric strain fields due to lattice mismatch. A one-dimensional model with a phenomenological well capture process, similar to that developed by Tessler and Eisenstein, has been implemented. The radiative processes are calculated from first principles, and the material band structures are computed using k (DOT) p theory. The model also features the incorporation of such effects as thermionic emission at heterojunctions, Shockley- Read-Hall recombination, piezoelectric strain fields, and self-consistent calculation of the quantum well bound states with dynamic device operation. The set of equations underlying the model is presented, with particular emphasis on the approximations used to achieve the previously stated goals. A sample structure is analyzed, and representative physical parameters are plotted. Finally, as an example of the modeled secondary physical processes, results showing the effects of incorporating strain-induced piezoelectric fields due to lattice mismatch are given.

Citation Download Citation

Curt A. Flory and Ghulam Hasnain "Modeling of gallium nitride optoelectronic devices", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391401

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