D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE

Zhibiao Zhao; Wei Li; Ming Qi; Aizhen Li

doi:10.1117/12.408454

29 November 2000 D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE

Zhibiao Zhao, Wei Li, Ming Qi, Aizhen Li

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408454
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Donor-acceptor pair (DAP) in wurtzite GaN films grown by radio frequency plasma assisted molecule beam epitaxy on sapphire substrates using low temperature GaN buffer layers have been studied using photoluminescence. The energy levels of N vacancy, as donors, were calculated using an approximate formula, and good agreement with DA emission results. Native defects related to DAP and their formation energies were discussed.

Citation Download Citation

Zhibiao Zhao, Wei Li, Ming Qi, and Aizhen Li "D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408454

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