Electrochromic tungsten oxide films for variable infrared reflectance devices

Michael G. Hutchins; Jose M. Gallego; Paul E. Y. Milne; Dawn Jeffrey; Ian D. Brotherston; E. O'Keefe; A. John Topping; N. S. Butt

doi:10.1117/12.448241

13 November 2001 Electrochromic tungsten oxide films for variable infrared reflectance devices

Michael G. Hutchins, Jose M. Gallego, Paul E. Y. Milne, Dawn Jeffrey, Ian D. Brotherston, E. O'Keefe, A. John Topping, N. S. Butt

Author Affiliations +

Proceedings Volume 4458, Solar and Switching Materials; (2001) https://doi.org/10.1117/12.448241
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The dependence of the infrared spectral optical constants, n_(lambda ) and k_(lambda ), of electrochromic tungsten oxide thin films, prepared by reactive magnetron sputtering at different substrate temperatures, on the quantities of charge, q, inserted has been determined from spectrophotometric measurements of transmittance and reflectance. For WO₃ films deposited at temperatures greater than 200 degree(s)C significant infrared absorption is observed to rise with increasing levels of charge insertion. For the most crystalline films prepared at temperatures greater than 350 degree(s)C the rates of change dn_(lambda )/dq and dk_(lambda )/dq are greatest. The results provide essential design data for variable reflectance/emittance devices. Rear surface devices, which mask the reflectance of a highly reflective rear surface mirror through a charge dependent increase in k_(lambda ), have been successfully demonstrated using either liquid or solid electrolytes. Monolithic devices have been prepared using a hybrid combination of sputtered and electron-beam evaporated coatings.

Citation Download Citation

Michael G. Hutchins, Jose M. Gallego, Paul E. Y. Milne, Dawn Jeffrey, Ian D. Brotherston, E. O'Keefe, A. John Topping, and N. S. Butt "Electrochromic tungsten oxide films for variable infrared reflectance devices", Proc. SPIE 4458, Solar and Switching Materials, (13 November 2001); https://doi.org/10.1117/12.448241

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