Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer

Il Ki Han; Du Chang Heo; Won Jun Choi; Jung Il Lee

doi:10.1117/12.481052

29 August 2002 Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer

Il Ki Han, Du Chang Heo, Won Jun Choi, Jung Il Lee

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481052
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Three types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 μm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x10¹⁷/cm³), Type B (p-InGaAsP, 2x10¹⁸/cm³), and Type C (p-InP, 2x10¹⁸/cm³), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (T₀) was higher for type B than others.

Citation Download Citation

Il Ki Han, Du Chang Heo, Won Jun Choi, and Jung Il Lee "Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481052

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