Influence of doping methods on electro-physical properties of CdTe:Mn crystals

E. S. Nikonyuk; Z. I. Zakharuk; Ilary M. Rarenko; M. I. Kuchma; I. M. Yurijchuk

doi:10.1117/12.502188

14 April 2003 Influence of doping methods on electro-physical properties of CdTe:Mn crystals

E. S. Nikonyuk, Z. I. Zakharuk, Ilary M. Rarenko, M. I. Kuchma, I. M. Yurijchuk

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502188
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

Electro-physical properties of CdTe:Mn crystals depending on doping method were studied. Three doping schemes were used: I - Mn was introduced to the melt of stoichiometric CdTe; II -- Cd, Mn and Te components were loaded according to the Cd_1-xMn_xTe solid solution; III -- Mn was introduced with loaded in stoichiometric proportions Cd and Te components. It was found that the properties of CdTe:Mn essentially depend on the method of impurity introduction. It may be caused by the difference of Mn atom position in CdTe lattice in different doping schemes and by the interaction of manganese atom with cadmium vacancy. For Cd_1-xMn_xTe (x = 0,02-0,30) solid solution crystals obtained according to scheme III a hysteresis type relaxation is observed in "heating-cooling" circles like that in p-CdTe crystals doped by Cu and Ag impurities.

Citation Download Citation

E. S. Nikonyuk, Z. I. Zakharuk, Ilary M. Rarenko, M. I. Kuchma, and I. M. Yurijchuk "Influence of doping methods on electro-physical properties of CdTe:Mn crystals", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502188

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