Paper
29 April 2004 Simulation benchmarking for the whole resist process
Author Affiliations +
Abstract
A full lithography simulation has become an essential factor for semiconductor manufacturing. We have been researching all kinds of problems for lithography process by creating and using our own simulation tool, which has contributed to extracting parameters related to exposure, post exposure bake, and development. Also, its performance has been proved in comparison with other simulation tools. In this paper, our lithography simulator and some of its features are introduced. For its benchmark, we describe our own simulator’s performance and accuracy for whole resist process by the comparison of a commercial tool. The sensitivity of process parameters and process latitude due to its parameters are discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang-Kon Kim, Ji-Eun Lee, Seung-Wook Park, Ji-Yong Yoo, and Hye-keun Oh "Simulation benchmarking for the whole resist process", Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); https://doi.org/10.1117/12.536210
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Cited by 1 scholarly publication.
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KEYWORDS
Lithography

Picture Archiving and Communication System

Computer simulations

Scanning electron microscopy

Coating

Photoresist processing

Diffusion

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