Paper
28 May 2004 Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
Balint Podor, Gy. Kovacs, G. Remenyi, I. G. Savel'ev
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558480
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
We report on temperature scaling experiments on the integer quantum Hall effect plateau-to-plateau transitions as well as on the i = 1 plateau-to-insulating phase transitions in two-dimensional electron gas in In0.53Ga0.47As/InP modulation-doped heterostructures. We have measured the longitudinal ρxx and Hall ρxy resistivities as a function of magnetic field in the temperature range 40 mK - 4.2 K. It was found that for both types of transitions the scaling exponent has the same value κ ≈ 0.6-0.7. The scaling exponent obtained in our experiments is significantly greater than κ = 0.42, the value generally considered to be universal.
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Balint Podor, Gy. Kovacs, G. Remenyi, and I. G. Savel'ev "Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558480
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KEYWORDS
Magnetism

Heterojunctions

Quantum physics

Scattering

Modulation

Phase shift keying

Temperature metrology

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