Paper
2 August 2004 Atomistic studies of thin film growth
Talat S. Rahman, Chandana Gosh, Oleg Trushin, Abdelkader Kara, Altaf Karim
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Abstract
We present here a summary of some recent techniques used for atomistic studies of thin film growth and morphological evolution. Specific attention is given to a new kinetic Monte Carlo technique in which the usage of unique labeling schemes of the environment of the diffusing entity allows the development of a closed data base of 49 single atom diffusion processes for periphery motion. The activation energy barriers and diffusion paths are calculated using reliable manybody interatomic potentials. The application of the technique to the diffusion of 2-dimensional Cu clusters on Cu(111) shows interesting trends in the diffusion rate and in the frequencies of the microscopic mechanisms which are responsible for the motion of the clusters, as a function of cluster size and temperature. The results are compared with those obtained from yet another novel kinetic Monte Carlo technique in which an open data base of the energetics and diffusion paths of microscopic processes is continuously updated as needed. Comparisons are made with experimental data where available.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Talat S. Rahman, Chandana Gosh, Oleg Trushin, Abdelkader Kara, and Altaf Karim "Atomistic studies of thin film growth", Proc. SPIE 5509, Nanomodeling, (2 August 2004); https://doi.org/10.1117/12.560016
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Cited by 9 scholarly publications.
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KEYWORDS
Diffusion

Chemical species

Monte Carlo methods

Thin film growth

Thin films

Metals

Pattern recognition

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