Recent progress of AlInGaN laser diodes

Shin-ichi Nagahama; Yasunobu Sugimoto; Tokuya Kozaki; Takashi Mukai

doi:10.1117/12.597098

1 April 2005 Recent progress of AlInGaN laser diodes

Shin-ichi Nagahama, Yasunobu Sugimoto, Tokuya Kozaki, Takashi Mukai

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.597098
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Nine years has passed since the initial development of GaN-based violet laser diodes (LDs) in the 405 nm wavelength range in 1995. Starting with next-generation high-density optical discs, the commercial use of violet LDs has been adopted in many new fields, such as biomedical, reprographic, and exposure fields. Recently, lasing wavelength has broadened to cover from the ultraviolet (UV) to blue-green regions, which enabled other new applications. In this paper, the current status of GaN-based LDs from the UV to blue-green regions is reported.

Citation Download Citation

Shin-ichi Nagahama, Yasunobu Sugimoto, Tokuya Kozaki, and Takashi Mukai "Recent progress of AlInGaN laser diodes", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.597098

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