Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition

Guangsheng Fu; Wei Yu; Wanbing Lu; Haifeng Zhu; Li Zhang; Wenge Ding

doi:10.1117/12.635356

6 December 2005 Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition

Guangsheng Fu, Wei Yu, Wanbing Lu, Haifeng Zhu, Li Zhang, Wenge Ding

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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60203E (2005) https://doi.org/10.1117/12.635356
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

Hydrogenated amorphous silicon nitride (a-SiN_x:H) thin films are deposited by helicon wave plasma chemical vapor deposition technique. The structural and photoluminescence properties of these films have been characterized by X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and ultraviolet-visible (UV-VIS) spectroscopy. It is shown that the silicon atom bonds exist in the Si-Si and Si-N configurations and the amorphous silicon regions appear separately in the Si-rich a-SiN_x films. All the PL spectra of the deposited films manifest itself as several interference peaks superposed on an energy-dependent Gaussian distributed band. The PL and absorption results of the deposited films with different nitrogen content support that the luminescence of the Si-rich a-SiN_x:H films is related to the photo-excited carriers radiation process in the separated amorphous silicon potential well region, while the blue shift of PL main peaks and the enlargement of PL intensity with increase nitrogen content are ascribed to the size reduction of amorphous silicon separated regions and the enhancement of confinement effect.

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Guangsheng Fu, Wei Yu, Wanbing Lu, Haifeng Zhu, Li Zhang, and Wenge Ding "Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60203E (6 December 2005); https://doi.org/10.1117/12.635356

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KEYWORDS

Amorphous silicon

Thin films

Silicon

Luminescence

Silicon films

Absorption

Plasma

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