Paper
10 February 2006 2 W continuous wave operation of optically pumped blue VECSEL with frequency doubling
Taek Kim, Jaeryung Yoo, Kisung Kim, Sangmoon Lee, Seongjin Lim, Gibum Kim, Junyoun Kim, Soohaeng Cho, Junho Lee, Yongjo Park
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Abstract
We have optimized a resonant gain structure of a 920 nm vertical external cavity surface emitting laser. We found that a long saturated carrier lifetime in shallow quantum well (QW) under a high injection level restricts the laser performance. An insertion of non-absorbing laser in the middle of barrier layers with multi QWs is effective to reduce the saturated carrier lifetime and, therefore, to enhance the laser performance. With the optimized laser structure, which has 10 periods of triple In0.09Ga0.91 As QWs located at the anti-standing wave optical field with Al0.3Ga0.7As non-absorbing layers in the middle of GaAs barrier, we achieved 4.9 W operation at 920nm. Subsequently blue laser was achieved by employing an intra-cavity frequency doubling crystal LBO. As a result, we demonstrated 2 W single transverse mode operation in blue (460 nm) with a 20 W pump laser power. The conversion efficiency from 808 nm pump laser to the blue laser is measured to be 10 %.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taek Kim, Jaeryung Yoo, Kisung Kim, Sangmoon Lee, Seongjin Lim, Gibum Kim, Junyoun Kim, Soohaeng Cho, Junho Lee, and Yongjo Park "2 W continuous wave operation of optically pumped blue VECSEL with frequency doubling", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320K (10 February 2006); https://doi.org/10.1117/12.642451
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Cited by 4 scholarly publications.
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KEYWORDS
Quantum wells

Gallium arsenide

Gallium

Aluminum

Indium gallium arsenide

Second-harmonic generation

Optical pumping

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