Electrical domains and submillimeter signal generation in AlGaN/GaN superlattices

I. Gordion; A. Manasson; V. I. Litvinov

doi:10.1117/12.687090

2 November 2006 Electrical domains and submillimeter signal generation in AlGaN/GaN superlattices

I. Gordion, A. Manasson, V. I. Litvinov

Proceedings Volume 6373, Terahertz Physics, Devices, and Systems; 63730D (2006) https://doi.org/10.1117/12.687090
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

The paper discusses the feasibility of a terahertz-signal source made of AlGaN/GaN superlattice. Negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. We relate the superlattice geometry and conduction band profile, distorted by polarization fields, to the oscillation frequency and power efficiency of the device. We also determine the optimal Al content, superlattice period, and the parameters of external circuit that favor sub-millimeter wave generation.

Citation Download Citation

I. Gordion, A. Manasson, and V. I. Litvinov "Electrical domains and submillimeter signal generation in AlGaN/GaN superlattices", Proc. SPIE 6373, Terahertz Physics, Devices, and Systems, 63730D (2 November 2006); https://doi.org/10.1117/12.687090

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