Quantum dot lasers and integrated guided wave devices on Si

Jun Yang; Zetian Mi; Pallab Bhattacharya

doi:10.1117/12.714262

8 February 2007 Quantum dot lasers and integrated guided wave devices on Si

Jun Yang, Zetian Mi, Pallab Bhattacharya

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648514 (2007) https://doi.org/10.1117/12.714262
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We have studied the growth and characteristics of self-organized InGaAs/GaAs quantum dot lasers and their monolithic integration with waveguides and quantum well electroabsorption modulators on Si. Utilizing multiple layers of InAs quantum dots as effective dislocation filters near the GaAs-Si interface, we have demonstrated high performance quantum dot lasers grown directly on Si that exhibit, for the first time, relatively low threshold current (J_th = 900 A/cm²), large characteristic temperature (T₀ = 278 K), and output slope efficiency ( ⩾0.3 W/A). Focused-ion-beam milling has been used to form high-quality facets for the cavity mirror and coupling groove of an integrated laser/waveguide system on Si. We have also achieved a groove-coupled laser/modulator system on Si that exhibits a coupling coefficient greater than 20% and a modulation depth of ~ 100% at 5 V reverse bias.

Citation Download Citation

Jun Yang, Zetian Mi, and Pallab Bhattacharya "Quantum dot lasers and integrated guided wave devices on Si", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648514 (8 February 2007); https://doi.org/10.1117/12.714262

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