Formation of narrow optical resonances using submillimeter and submicron-thin atomic vapor layer

D. Sarkisyan; A. Sargsyan; A. Papoyan; Y. Pashayan-Leroy

doi:10.1117/12.726796

13 March 2007 Formation of narrow optical resonances using submillimeter and submicron-thin atomic vapor layer

D. Sarkisyan, A. Sargsyan, A. Papoyan, Y. Pashayan-Leroy

Proceedings Volume 6604, 14th International School on Quantum Electronics: Laser Physics and Applications; 660405 (2007) https://doi.org/10.1117/12.726796
Event: 14th International School on Quantum Electronics: Laser Physics and Applications, 2006, Sunny Beach, Bulgaria

Abstract

Electromagnetically induced transparency (EIT) resonance, along with peculiarities of the accompanying velocity selective optical pumping/saturation (VSOP) resonances, have been studied using a thin cell with the thickness of Rb vapor column varying in L = 10-700 &mgr;m range, as well as using an extremely thin cell (ETC) with the thickness varying in the range of radiation wavelength &lgr; = 780 nm (L = 0.5&lgr; - 2.5&lgr;). The &Lgr;-systems on D₂ line of ⁸⁵Rb and ⁸⁷Rb have been studied experimentally with the use of bichromatic radiation of two separate diode lasers. It is demonstrated that size-conditioned strongly anisotropic contribution of atoms with different velocities in ETC results in several dramatic distinctions in formation of EIT and VSOP resonances in ETC, as compared with ordinary cm-size cell. The boundary between these two regimes falls on L ~ 10 &mgr;m. Theoretical model taking into account the peculiarities of the transmission spectra as a function of the ratio L/&lgr; is developed. The experimental transmission spectra are well described by the theoretical model.

Citation Download Citation

D. Sarkisyan, A. Sargsyan, A. Papoyan, and Y. Pashayan-Leroy "Formation of narrow optical resonances using submillimeter and submicron-thin atomic vapor layer", Proc. SPIE 6604, 14th International School on Quantum Electronics: Laser Physics and Applications, 660405 (13 March 2007); https://doi.org/10.1117/12.726796

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