Theory study of AlInGaN quantum well with different barriers

Feng Wen; Deming Liu; Lirong Huang

doi:10.1117/12.745602

12 December 2007 Theory study of AlInGaN quantum well with different barriers

Feng Wen, Deming Liu, Lirong Huang

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67822E (2007) https://doi.org/10.1117/12.745602
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

We investigate the optical gain properties of InGaN quantum well with different symmetry barriers and asymmetry barriers based on a self-consistent calculation which solves the Schrodinger equations and Poisson equations simultaneously. It is found that the Al_xIn_yGa_1-x-yN barriers which can eliminate the internal polarized field by adjusting the component x and y can improve the emission intensity in a large extent compared with other barriers. The internal polarized field is an important but not the only one factor to affect the emission power, the barrier confinement, the energy band are all have to be taken into considered. Otherwise, a quantum well which has proper asymmetry barriers also can obtain better emission efficiency than the well with symmetry barriers.

Citation Download Citation

Feng Wen, Deming Liu, and Lirong Huang "Theory study of AlInGaN quantum well with different barriers", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822E (12 December 2007); https://doi.org/10.1117/12.745602

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