Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

B. L. Liang; P. S. Wong; B. V. G. Dorogan; J. Tatebayashi; A. R. Albrecht; H. Xiang; Yu. I. Mazur; G. J. Salamo; S. R. J. Brueck; D. L. Huffaker

doi:10.1117/12.809784

17 February 2009 Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

B. L. Liang, P. S. Wong, B. V. G. Dorogan, J. Tatebayashi, A. R. Albrecht, H. Xiang, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, D. L. Huffaker

Author Affiliations +

Proceedings Volume 7224, Quantum Dots, Particles, and Nanoclusters VI; 722409 (2009) https://doi.org/10.1117/12.809784
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-organic chemical-vapor deposition on nano-patterned GaAs pyramids and planar GaAs (001) substrate are comparatively investigated. Photoluminescence (PL), PL excitation, and time-resolved PL measurements demonstrate that the DWELL grown on the GaAs pyramids has a broad QW PL band (FWHM ~ 90 meV) and a better QD emission efficiency than the DWELL structure grown on the planar GaAs (001) substrate. These properties are attributed to the InGaAs QW with distributed thickness profile on the faceted GaAs pyramid, which introduces tapered energy band structure and assists the carrier capture into the QDs. This research provides useful data for further improving the performance of DWELL structures for device applications.

Citation Download Citation

B. L. Liang, P. S. Wong, B. V. G. Dorogan, J. Tatebayashi, A. R. Albrecht, H. Xiang, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, and D. L. Huffaker "Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 722409 (17 February 2009); https://doi.org/10.1117/12.809784

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available