Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi; H. P. T. Nguyen; K. Cui; X. Han; S. Zhang; Y.-L. Chang

doi:10.1117/12.870760

15 November 2010 Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, Y.-L. Chang

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 784702 (2010) https://doi.org/10.1117/12.870760
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of ~ 14.4 mA/cm² and an energy conversion efficiency of ~ 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

Citation Download Citation

Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 784702 (15 November 2010); https://doi.org/10.1117/12.870760

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