Paper
21 February 2011 Power scaling of cw and pulsed IR and mid-IR OPSLs
J. V. Moloney, J. Hader, T.-L. Wang, Yi. Ying, Y. Kaneda, J. M. Yarborough, T. J. Rotter, G. Balakrishnan, C. Hains, S. W. Koch, W. Stolz, B. Kunert, R. Bedford
Author Affiliations +
Abstract
We present an overview of the quantum design, growth and lasing operation of both IR and mid-IR OPSL structures aimed at extracting multi-Watt powers CW and multi-kW peak power pulsed. Issues related to power scaling are identified and discussed. The IR OPSLs based on InGaAs QW bottom emitters targeted at wavelengths between 1015nm and 1040nm are operated in CW mode (yielding a maximum power of 64W) and pulsed (peak power of 245W). The mid-IR top emitter OPSLs designed to lase at 2μm are based on a novel lattice mismatched growth using InGaSb QWs and yield a maximum peak power of 350W pulsed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. V. Moloney, J. Hader, T.-L. Wang, Yi. Ying, Y. Kaneda, J. M. Yarborough, T. J. Rotter, G. Balakrishnan, C. Hains, S. W. Koch, W. Stolz, B. Kunert, and R. Bedford "Power scaling of cw and pulsed IR and mid-IR OPSLs", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190S (21 February 2011); https://doi.org/10.1117/12.874201
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Cited by 4 scholarly publications.
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KEYWORDS
Mid-IR

Quantum wells

Reflectivity

Gallium arsenide

Semiconductor lasers

Absorption

Etching

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