Electrical And Optical Properties Of Semiconductor Doping Superlattices

P. Paul Ruden

doi:10.1117/12.940818

11 August 1987 Electrical And Optical Properties Of Semiconductor Doping Superlattices

P. Paul Ruden

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940818
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

A short, elementary introduction into the physics of n-i-p-i doping superlattices is presented. Their electrical and optical properties which result from the unique tunability of their bandstructures are discussed. Examples of GaAs based n-i-p-i and hetero-n-i-p-i superlattices illustrate the novel phenomena that have been predicted and experimentally observed. The device potential of these engineered semiconductor materials is also discussed.

Citation Download Citation

P. Paul Ruden "Electrical And Optical Properties Of Semiconductor Doping Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940818

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