Formation Of Shallow Junctions With TiN[sub]x[/sub]O[sub]y[/sub]/TiSi[sub]2[/sub] Ohmic Contacts For Self-Aligned Silicide Technology

Y. H. Ku; E. Louis; S. K. Lee; D. K. Shih; D. L. Kwong; C. O Lee; J. R. Yeargain

doi:10.1117/12.941026

22 April 1987 Formation Of Shallow Junctions With TiN_xO_y/TiSi₂ Ohmic Contacts For Self-Aligned Silicide Technology

Y. H. Ku, E. Louis, S. K. Lee, D. K. Shih, D. L. Kwong, C. O Lee, J. R. Yeargain

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941026
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The formations of TiNx0y/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 as well as p+/n shallow junction using doped silicide technique have been studied. Results of the chemical stability of TiNx0v/TiSi7/Si in dilute HF, the effectiveness of TiNx0, on TiSi2 as a diffusion barrier Mr Al boron diffusion in Si02/TiSi,2/Si structure, the surface dopant concentration at the TiSi7/Si interface, and the junction quality are presented. It is found that TiNx0y/TiSi2 bilayer has good chemical stability in dilute HF for 60 sec and acts as an effeentive contact barrier between Al and Si substrate up to 500°C, 30 min. Shallow p±n junction with high boron concentration at the TiSO/Si interface has been formed. P-1-/n diodes and p-channel LDD MOSFETs fabricated using this technology show good I-V characteristics with a reverse leakage current on the order of 10-9A/cm.

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Y. H. Ku, E. Louis, S. K. Lee, D. K. Shih, D. L. Kwong, C. O Lee, and J. R. Yeargain "Formation Of Shallow Junctions With TiN_xO_y/TiSi₂ Ohmic Contacts For Self-Aligned Silicide Technology", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941026

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