Paper
21 March 2012 Contact hole shrink process using directed self-assembly
Yuriko Seino, Hiroki Yonemitsu, Hironobu Sato, Masahiro Kanno, Hikazu Kato, Katsutoshi Kobayashi, Ayako Kawanishi, Tsukasa Azuma, Makoto Muramatsu, Seiji Nagahara, Takahiro Kitano, Takayuki Toshima
Author Affiliations +
Abstract
We report on a contact hole shrink process using directed self-assembly. A diblock copolymer, poly (styrene-blockmethyl methacrylate) (PS-b-PMMA), is used to shrink contact holes. Contact hole guide patterns for graphoepitaxy are formed by ArF photoresists. Cylindrical domains of PMMA is removed using organic solvents after DUV (λ <200 nm) irradiation. In this work, it is found that a solvent system is the best developer from the evaluated single solvent systems and mixed solvent systems. The wet development of PS-b-PMMA strongly depends on total exposure dose of DUV irradiation. With lower exposure dose, the cylindrical domains of PMMA are not clearly removed. With optimum exposure dose, PMMA is developed clearly. The contact hole guide patterns of 75 nm in diameter are successfully shrunk to 20 nm in diameter using the wet development process.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuriko Seino, Hiroki Yonemitsu, Hironobu Sato, Masahiro Kanno, Hikazu Kato, Katsutoshi Kobayashi, Ayako Kawanishi, Tsukasa Azuma, Makoto Muramatsu, Seiji Nagahara, Takahiro Kitano, and Takayuki Toshima "Contact hole shrink process using directed self-assembly", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230Y (21 March 2012); https://doi.org/10.1117/12.915652
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Cited by 15 scholarly publications.
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KEYWORDS
Deep ultraviolet

Polymethylmethacrylate

Photoresist developing

Picosecond phenomena

Photoresist materials

Directed self assembly

Scanning electron microscopy

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