Diffusion thermopower in suspended graphene

R. G. Vaidya; N. S. Sankeshwar; B. G. Mulimani

doi:10.1117/12.925343

15 October 2012 Diffusion thermopower in suspended graphene

R. G. Vaidya, N. S. Sankeshwar, B. G. Mulimani

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491U (2012) https://doi.org/10.1117/12.925343
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Diffusion thermopower, S_d, in suspended graphene is investigated for 100 < T< 350 K. Electrons are assumed to be scattered by in-plane and out-of-plane acoustic phonons. Numerical results show that, temperature dependence of S_d, is almost linear for both out-of-plane phonons and in-plane phonons, dominant contribution being from out-of-plane phonons. Comparison with recent available experimental thermopower data [Xu et al arXiv: 1012. 2937v1, (condmat. mes-hall)] obtains a good fit for T< 170K. S_d calculated using Mott expression is found to overestimate the values. Carrier concentration dependence is also studied. Role and relative importance of the two scattering mechanisms is studied.

Citation Download Citation

R. G. Vaidya, N. S. Sankeshwar, and B. G. Mulimani "Diffusion thermopower in suspended graphene", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491U (15 October 2012); https://doi.org/10.1117/12.925343

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