Silicon-organic hybrid devices

L. Alloatti; D. Korn; J. Pfeifle; R. Palmer; S. Koeber; M. Baier; R. Schmogrow; Sebastian Diebold; P. Pahl; T. Zwick; H. Yu; W. Bogaerts; R. Baets; M. Fournier; J. Fedeli; R. Dinu; C. Koos; W. Freude; J. Leuthold

doi:10.1117/12.2005866

14 March 2013 Silicon-organic hybrid devices

L. Alloatti, D. Korn, J. Pfeifle, R. Palmer, S. Koeber, M. Baier, R. Schmogrow, Sebastian Diebold, P. Pahl, T. Zwick, H. Yu, W. Bogaerts, R. Baets, M. Fournier, J. Fedeli, R. Dinu, C. Koos, W. Freude, J. Leuthold

Author Affiliations +

Proceedings Volume 8629, Silicon Photonics VIII; 86290P (2013) https://doi.org/10.1117/12.2005866
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of V_πL = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum- or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ⁽²⁾-nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

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L. Alloatti, D. Korn, J. Pfeifle, R. Palmer, S. Koeber, M. Baier, R. Schmogrow, Sebastian Diebold, P. Pahl, T. Zwick, H. Yu, W. Bogaerts, R. Baets, M. Fournier, J. Fedeli, R. Dinu, C. Koos, W. Freude, and J. Leuthold "Silicon-organic hybrid devices ", Proc. SPIE 8629, Silicon Photonics VIII, 86290P (14 March 2013); https://doi.org/10.1117/12.2005866

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