Paper
9 March 2015 High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes
Hieu P. T. Nguyen, Mehrdad Djavid, Steffi Y. Woo, Xianhe Liu, Qi Wang, Gianluigi A. Botton, Zetian Mi
Author Affiliations +
Abstract
We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ~ 0.3ns to ~ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ~ 60A/cm2, with a color rendering index of ~ 95.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hieu P. T. Nguyen, Mehrdad Djavid, Steffi Y. Woo, Xianhe Liu, Qi Wang, Gianluigi A. Botton, and Zetian Mi "High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 938307 (9 March 2015); https://doi.org/10.1117/12.2084777
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Light emitting diodes

Nanowires

Heterojunctions

Quantum dots

External quantum efficiency

Luminescence

Gallium nitride

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