Subband Spectroscopy Of III-V Semiconductor Microstructures

Ulrich Merkt

doi:10.1117/12.947313

18 August 1988 Subband Spectroscopy Of III-V Semiconductor Microstructures

Ulrich Merkt

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947313
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Far-infrared spectroscopy of electric subbands which are created by the spatial confinement of electrons in low-dimensional semiconductor systems is discussed. As examples, two-dimensional (2D) subbands in GaAs/Ga1-xAlxAs heterojunctions and 1D subbands in multiwire metal-oxide-InSb structures are reviewed.

Citation Download Citation

Ulrich Merkt "Subband Spectroscopy Of III-V Semiconductor Microstructures", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947313

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