Paper
8 January 2015 Generation of modulated microchip laser pulses
F. Almabouada, K. E. Aiadi, D. Louhibi
Author Affiliations +
Proceedings Volume 9447, 18th International School on Quantum Electronics: Laser Physics and Applications; 94471L (2015) https://doi.org/10.1117/12.2086953
Event: Eighteenth International School on Quantum Electronics: Laser Physics and Applications, 2014, Sozopol, Bulgaria
Abstract
Modulated 532 nm laser pulses were generated by a Nd:YVO4 microchip laser and a KTP crystal end-pumped by a 808 nm laser diode. The interest in such works arise from the efficiency of this type of laser in several applications. To obtain the desired type of the modulated laser pulses, the electrical circuit of the laser diode was designed so as to enable varying their driving signal and current values. Different modulated signals were used, such as square wave, sine wave, and burst mode pulses. Varying the peak drive current, the duty cycle, and the number of pulses allowed us to adjust the laser energy. For the burst mode experiment, the pulse energy obtained was about 1.2 μJ.
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F. Almabouada, K. E. Aiadi, and D. Louhibi "Generation of modulated microchip laser pulses", Proc. SPIE 9447, 18th International School on Quantum Electronics: Laser Physics and Applications, 94471L (8 January 2015); https://doi.org/10.1117/12.2086953
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KEYWORDS
Semiconductor lasers

Modulation

Laser energy

Crystals

Neodymium lasers

Laser crystals

Ferroelectric materials

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