Paper
26 February 2016 Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells
Morteza Monavarian, Daniel Rosales, Bernard Gil, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, Vitaliy Avrutin
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Abstract
Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morteza Monavarian, Daniel Rosales, Bernard Gil, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, and Vitaliy Avrutin "Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974826 (26 February 2016); https://doi.org/10.1117/12.2213835
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Cited by 4 scholarly publications.
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KEYWORDS
Indium gallium nitride

Excitons

Gallium nitride

Quantum wells

Luminescence

Indium

Lab on a chip

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