Design and growth of novel compounds for radiation sensors: multinary chalcogenides

N. B. Singh; Ching-Hua Su; Teja Nagaradona; Brad Arnold; Fow-Sen Choa

doi:10.1117/12.2220405

12 May 2016 Design and growth of novel compounds for radiation sensors: multinary chalcogenides

N. B. Singh, Ching-Hua Su, Teja Nagaradona, Brad Arnold, Fow-Sen Choa

Proceedings Volume 9824, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XVII; 982411 (2016) https://doi.org/10.1117/12.2220405
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

Increasing threats of radiological weapons have revitalized the researches for low cost large volume γ-ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl₃AsSe₃, Tl₃AsSe_3-xS_x, TlGaSe₂, AgGaGe₃Se₈, Ag_xLi_1-xAgGaGe₃Se₈ and PbTlI_5-x Se_x compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl₃AsSe₃ (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage.

Citation Download Citation

N. B. Singh, Ching-Hua Su, Teja Nagaradona, Brad Arnold, and Fow-Sen Choa "Design and growth of novel compounds for radiation sensors: multinary chalcogenides", Proc. SPIE 9824, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XVII, 982411 (12 May 2016); https://doi.org/10.1117/12.2220405

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available