Ge/SiGe quantum well for photonic applications: modelling of the quantum confined Stark effect

Giovanni Isella; Andrea Ballabio; Jacopo Frigerio

doi:10.1117/12.2234982

13 May 2016 Ge/SiGe quantum well for photonic applications: modelling of the quantum confined Stark effect

Giovanni Isella, Andrea Ballabio, Jacopo Frigerio

Proceedings Volume 9891, Silicon Photonics and Photonic Integrated Circuits V; 98910G (2016) https://doi.org/10.1117/12.2234982
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

Ge quantum wells are emerging as a relevant material system for enabling fast and power-efficient optical modulation in the framework of Si-photonics. The need for reliable designs of QW structures, matching given operating wavelengths and bias voltages, calls for the implementation of modelling tools capturing the optical properties of SiGe heterostructures. Here we report on the calculation of the quantum confined Stark effect based on an eight-band k×p model. The obtained spectra are analysed and compared with experimental data showing a good agreement between calculation and measurements.

Citation Download Citation

Giovanni Isella, Andrea Ballabio, and Jacopo Frigerio "Ge/SiGe quantum well for photonic applications: modelling of the quantum confined Stark effect", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910G (13 May 2016); https://doi.org/10.1117/12.2234982

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