CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12421 > Article
Presentation
21 March 2023 Recent development of GaN Power switching devices with Ion Implantation technology
Tetsu Kachi, Hideki Sakurai, Testo Narita, Maciej Matys, Jun Suda
Author Affiliations +
Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649083
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Selective doping technique by ion implantation was applied to power devices. A novel activation method for p-type doping named as UHPA (Ultra High-Pressure Annealing) was recently developed. Using this method, edge termination of FLR (Field Limiting Rings) structure by Mg ion implantation for a pn diode was formed, and the improvement of the breakdown voltage was confirmed. JBS (Junction Barrier Schottky) diodes were also fabricated, which showed high performance such as breakdown voltage of 675V, specific on-resistance of 0.67mΩ·cm2 and avalanche capability. The activation of Mg using UHPA has enabled p-type selective doping even in GaN power devices. Financial supports: MEXT (JPJ005357 and JPJ009777)
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Tetsu Kachi, Hideki Sakurai, Testo Narita, Maciej Matys, and Jun Suda "Recent development of GaN Power switching devices with Ion Implantation technology", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649083
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Ion implantation
Doping
Gallium nitride
Magnesium
Switching
Diffusion
Diodes
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top