Presentation
5 March 2022 Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes
Author Affiliations +
Abstract
InGaN-based three dimensional structures fabricated on (-1-12-2) through a regrowth technique are promising for highly efficient polychromatic emitters because the structures do not involve (0001) polar-plane facets. We experimentally demonstrate (1) fast radiative recombination in all the facet quantum wells, (2) structure and eventually emission color tunability through the control of mask geometry for the regrowth, and (3) LED operation with pastel and white color emission. These findings suggest promising features of our polar-plane-free faceted InGaN quantum wells as the next generation visible emitters.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuru Funato, Yoshinobu Matsuda, and Yoichi Kawakami "Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200111 (5 March 2022); https://doi.org/10.1117/12.2608556
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KEYWORDS
Indium gallium nitride

Quantum wells

Light emitting diodes

Picosecond phenomena

Gallium nitride

Luminescence

Modulation

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